Abstract:Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions covering cores of dislocations. Space charge regions also may act as local volumes of enhanced non-radiative recombination, deteriorating the photoluminescence efficiency. Surface etching has appeared to be an efficient means to increase the photoluminescence yield from MOCVD GaN materials. This work aimed to improve the scintillation characteristics of MOCVD GaN by a wet etching method. An additional blue photo-luminescence (B-PL) band peaking at 2.7-2.9 eV and related to dislocations was discovered. This B-PL band intensity appeared to be dependent on wet etching exposure. The intensity of the B-PL was considerably enhanced when recorded at rather low temperatures. This finding resembles PL thermal quenching of B-PL centers. The mechanisms of scintillation intensity and spectrum variations were examined by coordinating the complementary photo-ionization and PL spectroscopy techniques. Analysis of dislocation etch pits was additionally performed by scanning techniques, such as confocal and atomic force microscopy. It was proved that this blue luminescence band, which peaked at 2.7-2.9 eV, is related to point defects those decorate dislocation cores. It was shown that the intensity of this blue PL band was increased due to enhancement of light extraction efficiency, dependent on the surface area of either single etch-pit or total etched crystal surface.

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Cathodoluminescence study of GaN-based film structures

Identification And Elimination Of Inductively Coupled Plasma-Induced Defects In Alxga1-Xn/Gan Heterostructures

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Threading Dislocations Related Persistent Photoconductivity Effect in Hydride Vapor Phase Epitaxy Grown Gan Epilayers

Mg Diffusion and Activation along Threading Dislocations in GaN

Utilization of FIB Technique in TEM Specimen Preparation of GaN-based Devices for Dislocation Investigation

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Dislocation luminescence in GaN single crystals under nanoindentation

Application of multiphoton photoluminescence in characterization of GaN dislocations

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire