Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Structural and optical study of irradiation effect in GaN epilayers induced by 308MeV Xe ions

Strain and Microstructures of Gan Epilayers with Thick Ingan Interlayer Grown by Mocvd

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Hydrogen-dependent lattice dilation in GaN

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Strain Property Studies of GaN:Mg Films Grown by MOCVD

High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films

Structural and Optical Investigation of Nonpolar A-Plane Gan Grown by Metal-Organic Chemical Vapour Deposition on R-Plane Sapphire by Neutron Irradiation

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Lattice Disorder and N Elemental Segregation in Ion Implanted GaN Epilayer

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures