Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Properties of GaN film grown by hydride vapor phase epitaxy

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering

Strain and Microstructures of Gan Epilayers with Thick Ingan Interlayer Grown by Mocvd

Hydrogen-dependent lattice dilation in GaN

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Elastic strain in InGaN and AlGaN layers

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain Effect on the Phonon Transport Properties of Hydrogenated 2D GaN

High-Spatial-Resolution Strain Measurements by Auger Electron Spectroscopy in Epitaxial-Lateral-Overgrowth Gan

X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Effect of defects on strain state in nonpolar a-plane GaN