Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Analysis of the Curvature of GaN Thick Films Grown by HVPE

X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy

Properties of GaN film grown by hydride vapor phase epitaxy

Gradual Variation Method for Thick GaN Heteroepitaxy by Hydride Vapour Phase Epitaxy

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Determination of Dislocation Density in HVPE-GaN Layer

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Thickness Measurement of GaN Films by X-ray Diffraction

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Growth and Optical Properties of Double Heterostructure GaN/InGaN/GaN Films with Large Composition

Study of different type of dislocations in GaN thin films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy