Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Determination of Dislocation Density in HVPE-GaN Layer

X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Study of Dislocation Densities of Thick GaN Films

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Analysis of the Curvature of GaN Thick Films Grown by HVPE

Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching