Abstract:In order to study the thermal transport characteristics of the heterogeneous gallium nitride/graphene/silicon carbide interface, the effects of temperature, size and vacancy defects on the thermal conductance of the interface were investigated by non-equilibrium molecular dynamics method, and the changes of phonon state density and phonon participation rate on the thermal conductance of the interface were further analysed. The results show that the thermal conductance of the interface increases with increasing temperature. The analysis shows that with the increase of temperature, the lattice vibration intensities, the density of low frequency phonon states and the number of phonons involved in heat transport increase. The change of thermal conductance at the interface of single-layer graphene is higher than that of multi-layer graphene. When the structural size of the heat transport direction is changed, and the number of layers of gallium nitride and silicon carbide is changed at the same time, the thermal conductance at the interface does not change significantly, and the phonon scattering of the thermal transport at the interface is almost unaffected. However, as the number of graphene interlayers increases from the first layer to the fifth layer, the interface thermal conductance first decreases and then slowly increases. Because of the fourth layer, the participation rate of low frequency phonons decreases, more phonons are localised, and the number of phonons not involved in heat transfer increases, the interfacial thermal conductance reaches the minimum value of 0.024GW/m 2 K. As the vacancy defect concentration increases, the interfacial thermal conductance first increases gradually and then decreases.The difference is that when the concentration of single vacancy defects is 10%, the interface thermal conductance reaches the maximum value of 0.063GW/m 2 K. When the concentration of double vacancy defects is 12%, the interfacial thermal conductance reaches the maximum value of 0.065GW/m 2 K. The analysis shows that more phonons enter the delocalisation from the local region and more phonons participate in the heat transfer, leading to the increase of the interface thermal conductance. The results are useful for tuning the thermal transport performance of GaN devices and provide a theoretical basis for the design of devices with heterogeneous interfaces.

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Study of Dislocation Densities of Thick GaN Films

Determination of Dislocation Density in HVPE-GaN Layer

Thermal Transport Characterization of Monolayer GaN Nanoribbon Doped with Group IV Materials: An Equilibrium Molecular Dynamics Study

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Thermal conductivity of GaN with a vacancy and an Oxygen point defect

Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Thermal Conductivity Modeling of GaN Films

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Heat transport characteristics of gallium nitride/graphene/silicon carbide heterointerface Molecular dynamics studies

Effect of Isotope on Lattice Thermal Conductivity of Lateral Epitaxial Overgrown GaN

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction