Abstract:We report the thermal transport properties of wurtzite GaN in the presence of dislocations using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration are analyzed and found to considerably reduce the thermal conductivity while impacting its temperature dependence in a different manner. Isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T-1 variation in combination with an exponent factor that depends on the material's nature, type and the structural characteristics of the dislocation core. Furthermore, the impact of the dislocation density on the thermal conductivity of bulk GaN is examined. The variation and absolute values of the total thermal conductivity as a function of the dislocation density are similar for defected systems with both screw and edge dislocations. Nevertheless, we reveal that the thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are different. The discrepancy of the anisotropy of the thermal conductivity grows with increasing density of dislocations and it is more pronounced for the systems with edge dislocations. Besides the fundamental insights of the presented results, these could also be used for the identification of the type of dislocations when one experimentally obtains the evolution of thermal conductivity with temperature since each type of dislocation has a different signature, or one could extract the density of dislocations with a simple measurement of thermal anisotropy.

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Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of dislocations on the thermal decomposition of GaN

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

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Utilization of FIB Technique in TEM Specimen Preparation of GaN-based Devices for Dislocation Investigation

Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN

Study of Dislocation Densities of Thick GaN Films

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

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Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Effects of Point Defects and Dislocations on Spectral Phonon Transport Properties of Wurtzite Gan