Abstract:We report the thermal transport properties of wurtzite GaN in the presence of dislocations using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration are analyzed and found to considerably reduce the thermal conductivity while impacting its temperature dependence in a different manner. Isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T-1 variation in combination with an exponent factor that depends on the material's nature, type and the structural characteristics of the dislocation core. Furthermore, the impact of the dislocation density on the thermal conductivity of bulk GaN is examined. The variation and absolute values of the total thermal conductivity as a function of the dislocation density are similar for defected systems with both screw and edge dislocations. Nevertheless, we reveal that the thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are different. The discrepancy of the anisotropy of the thermal conductivity grows with increasing density of dislocations and it is more pronounced for the systems with edge dislocations. Besides the fundamental insights of the presented results, these could also be used for the identification of the type of dislocations when one experimentally obtains the evolution of thermal conductivity with temperature since each type of dislocation has a different signature, or one could extract the density of dislocations with a simple measurement of thermal anisotropy.

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Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

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Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

Role of Edge Dislocations in Enhancing the Yellow Luminescence of N-Type Gan

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

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Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Effects of Dislocations on Electron Transport in Wurtzite InN

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes