Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

On compensation in Si-doped AlN

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Residual Donors and Compensation in Metalorganic Chemical Vapor Deposition As-Grown N-Gan