Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Study on strain relaxation in AlGaN/GaN superlattices grown by metal-organic chemical vapor deposition

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Fabrication of AlGaN/GaN High-Electron-mobility Transistors