Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Effect of Si and Zn Doping on Surface Defects in AlGaInAs Compositionally Graded Buffer by MOCVD

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Zn-dopant dependent defect evolution in GaN nanowires

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Aluminum Doping Property in SiC Epilayers Grown at High Growth Rate Using Chloride-Based CVD

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Micro-defects in Ge doped Czochralski grown Si crystals

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

X-ray Study on the Defects Induced by Cd-doped InSb

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Screening and manipulation by segregation of dopants in grain boundary of Silicon carbide: First-principles calculations