Abstract:Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ∼68 ns (∼13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III-V heterointerface. Furthermore, a reasonably high effective lifetime of ∼78 ns is demonstrated in a QW of ∼30 nm 1.6% ε-Ge, a moderate reduction from ∼99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III-V heteroepitaxy and paves a path for integrated Ge photonics.

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Effects of in-situ thermal annealing on metamorphic InGaAs photodetector materials grown by molecular beam epitaxy

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Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

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Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

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Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes

Investigation of deep level defects on Beryllium compensation doping of In 0.53 Ga 0.47 As/GaAs 0.49 Sb 0.51 type-II superlattice photodiodes.