Abstract:The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated to extend the absorption spectral range. The scanning transmission electron microscopy, high-resolution X-ray diffraction, and atomic force microscopy measurements exhibit good material quality, while the photoluminescence (PL) spectra demonstrate a wide band gap tunability for the InGaAs obtained via the DA growth technique. The photoluminescence peak can be effectively shifted from 1690 nm (0.734 eV) for conventional random alloy (RA) InGaAs to 1950 nm (0.636 eV) for 8 monolayer (ML) DA InGaAs at room temperature. The complete set of optical constants of DA InGaAs has been extracted via the ellipsometry technique, showing the absorption coefficients of 398, 831, and 1230 cm–1 at 2 μm for 6, 8, and 10 ML DA InGaAs, respectively. As the period thickness increases for DA InGaAs, a red shift at the absorption edge can be observed. Furthermore, the simulated band structures of DA InGaAs via an environment-dependent tight binding model agree well with the measured photoluminescence peaks, which is advantageous for a physical understanding of band structure engineering via the DA growth technique. These investigations and results pave the way for the future utilization of the DA-grown InAs/GaAs short-period superlattices as a promising absorption material choice to extend the photodetector response beyond the cutoff wavelength of random alloy InGaAs.

Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

2.5-Μm InGaAs Photodiodes Grown on GaAs Substrates by Interfacial Misfit Array Technique

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Study of GSMBE Growth and Characteristics of High-Quality Strained In0.63Ga0.37AsInP Quantum Wells

Analyzing extended wavelength InGaAs photodetectors: the effects of window and active layer thickness on optical characteristics

Anneal Treatment to Improve the Performance of Extended Wavelength In0.83ga0.17as Photodetectors

MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors

Femtosecond modulated reflectance investigation of In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 lattice-matched to GaAs (100) substrate