Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection

Bingtian Guo,Baolai Liang,Jiyuan Zheng,Sheikh Ahmed,Sanjay Krishna,Avik Ghosh,Joe Campbell
DOI: https://doi.org/10.1021/acsphotonics.3c01268
IF: 7
2024-03-18
ACS Photonics
Abstract:The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated to extend the absorption spectral range. The scanning transmission electron microscopy, high-resolution X-ray diffraction, and atomic force microscopy measurements exhibit good material quality, while the photoluminescence (PL) spectra demonstrate a wide band gap tunability for the InGaAs obtained via the DA growth technique. The photoluminescence peak can be effectively shifted from 1690 nm (0.734 eV) for conventional random alloy (RA) InGaAs to 1950 nm (0.636 eV) for 8 monolayer (ML) DA InGaAs at room temperature. The complete set of optical constants of DA InGaAs has been extracted via the ellipsometry technique, showing the absorption coefficients of 398, 831, and 1230 cm–1 at 2 μm for 6, 8, and 10 ML DA InGaAs, respectively. As the period thickness increases for DA InGaAs, a red shift at the absorption edge can be observed. Furthermore, the simulated band structures of DA InGaAs via an environment-dependent tight binding model agree well with the measured photoluminescence peaks, which is advantageous for a physical understanding of band structure engineering via the DA growth technique. These investigations and results pave the way for the future utilization of the DA-grown InAs/GaAs short-period superlattices as a promising absorption material choice to extend the photodetector response beyond the cutoff wavelength of random alloy InGaAs.
physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem this paper attempts to address is the extension of the absorption spectrum range of short-wave infrared (SWIR) light detection materials. Specifically, the authors studied a series of InAs/GaAs short-period superlattice samples prepared by digital alloy (DA) growth technology to achieve bandgap tunability, thereby extending the response range of photodetectors beyond the cutoff wavelength of traditional random alloy InGaAs. ### Background - **Limitations of traditional materials**: Traditional InGaAs materials are widely used as absorption materials in the short-wave infrared region (such as imaging and optical communication applications), but their absorption spectrum range is limited, typically with a cutoff wavelength of around 1.7 μm. - **Advantages of digital alloy technology**: Digital alloy technology can improve the performance of optoelectronic materials, such as overcoming the limitations of miscibility gaps, designing new band structures, and achieving bandgap tunability. ### Research Objectives - **Extend the absorption spectrum range**: By studying the absorption characteristics of InAs/GaAs short-period superlattices with different period thicknesses in the short-wave infrared region, particularly extending their absorption edge beyond 1.7 μm. - **Characterize material properties**: Use scanning transmission electron microscopy (STEM), high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements to characterize the morphology and structure of the materials in detail. - **Extract optical constants**: Extract the optical constants of DA-InGaAs, including the absorption coefficient and complex refractive index, through ellipsometry measurements to evaluate their potential in optoelectronic devices. ### Main Findings - **Bandgap tunability**: Through digital alloy technology, the bandgap of InGaAs/GaAs short-period superlattices can be adjusted over a wide range. For example, at room temperature, the PL peak shifts from 1690 nm (0.734 eV) of traditional random alloy InGaAs to 1950 nm (0.636 eV) of 8 ML DA-InGaAs. - **Material quality**: STEM and HR-XRD results indicate that these samples have good material quality, and the period thickness matches the design values. - **Optical constants**: The absorption coefficients of DA-InGaAs with different period thicknesses were extracted through ellipsometry measurements, showing that the absorption edge redshifts to longer wavelengths as the period thickness increases. ### Conclusion - **Potential applications**: These research results lay the foundation for the future use of InAs/GaAs short-period superlattices grown by digital alloy technology as absorption materials in short-wave infrared light detection applications, particularly in imaging, optical communication, and lidar fields. - **Systematic study**: A systematic study of DA-InGaAs samples with different period thicknesses verified the effectiveness of digital alloy technology in extending the absorption spectrum range. In summary, this paper demonstrates the great potential of digital alloy technology in extending the absorption spectrum range of short-wave infrared light detection materials through detailed research and characterization.