Abstract:In x Ga 1−x As/In y Ga 1−y As strain-balanced quantum well cells (QWCs) have been shown to be beneficial for photovoltaic applications in particular to extend the light absorption edge of a single-junction cell toward the near infrared with a lower reduction of the open-circuit voltage compared to a single band-gap cell. The strain-balancing condition ensures that the multi-quantum well as a whole does not relax. However, if the mismatch between wells and barriers exceeds a critical limit, the structure becomes vulnerable to morphological or compositional fluctuations, which can lead to a local structural breakdown with the generation of extended defects of a completely different nature from misfit dislocations. In this work, we investigated a series of strain-balanced InGaAs QWCs grown on InP for thermophotovoltaic applications by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements. Despite being electrically active, these defects appear to have a minor impact on the dark current of the cells but cause a drop of the photocurrent at relatively low forward bias voltage. The higher carrier collection efficiency revealed both by EBIC and CL at the boundaries of the defects suggests that a notch in the valence band edge limits the collection of holes generated in the MQW and the energy states, induced by the defects inside the energy gap, assist the tunneling of holes through the notch. At zero bias, the overall reduction of the collection efficiency is of the order of a few percent but the rate of recombination of photogenerated carriers increases dramatically with increasing forward-bias voltage as the junction built-in field drops more rapidly where the density of in-gap states is higher.

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Al0.2Ga0.8As Solar Cells Monolithically Grown on Si and GaAs by MBE for III-V/Si Tandem Dual-junction Applications

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Design for Increased Defect Tolerance in Metamorphic GaAsP-on-Si Top Cells

1.7Ev Al0.2ga0.8as Solar Cells Epitaxially Grown on Silicon by Ssmbe Using A Superlattice and Dislocation Filters

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Engineering Surface Architectures for Improved Durability in III-V Photocathodes

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Mbe Growth of 1.7ev Al0.2ga0.8as and 1.42ev Gaas Solar Cells on Si Using Dislocations Filters: an Alternative Pathway Toward Iii-V/Si Solar Cells Architectures

InAs/InGaP Quantum Dot Solar Cells with an AlGaAs Interlayer

Effects of Zn Diffusion in Tunnel Junction and Its Solution for High Efficiency Large Area Flexible GaInP/GaAs/InGaAs Tandem Solar Cell

Physics of Grain Boundaries in Polycrystalline Photovoltaic Semiconductors

Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells