Abstract:ABSTRACT The monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×10 6 cm −2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages ( V oc ) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm 2 . These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In 0.49 Ga 0.51 P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the V oc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

1.7Ev Al0.2ga0.8as Solar Cells Epitaxially Grown on Silicon by Ssmbe Using A Superlattice and Dislocation Filters

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells

Design for Increased Defect Tolerance in Metamorphic GaAsP-on-Si Top Cells

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

Wide-band-gap InAlAs solar cell for an alternative multijunction approach

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

(Invited) Defects in Cast-Mono Crystalline Silicon

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

High-efficiency InP-based Multijunction Solar Cells

Fabrication of 0.6 eV Bandgap In0.69Ga0.31As Thermophotovoltaic Cells and Its System Demonstration

Gettering in PolySi/SiO x Passivating Contacts Enables Si-Based Tandem Solar Cells with High Thermal and Contamination Resilience

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells

Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience

Theoretical Study on Potential Performance of Lattice-Matched Monolithic GaNP/GaNAsP/Si Triple-Junction Solar Cell

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

High Current of GaInNAs Solar Cell Integrating Distributed Bragg Reflectors Grown by Metalorganic Vapor Phase Epitaxy