High Current of GaInNAs Solar Cell Integrating Distributed Bragg Reflectors Grown by Metalorganic Vapor Phase Epitaxy

Xiaobin Zhang,Wenyi Yang,Liming Liu,Jianqing Liu,Kaiwen Lin,Ke Wang,Yuehui Wang

DOI: https://doi.org/10.35848/1882-0786/ac17d0

IF: 2.819

2021-01-01

Applied Physics Express

Abstract:GaInNAs junctions can be applied to the lattice-matched five-junction (5J) or six-junction (6J) solar cells to achieve ultra-high efficiency. In this work, a GaInNAs solar cell integrating distributed Bragg reflectors (DBR) is grown by metalorganic vapor phase epitaxy. According to external quantum efficiency measurements, the photocurrent can be improved by ∼20% due to DBR. Meanwhile, a short-circuit current (J sc ) of GaInNAs DBR-cell is obtained high as 13.78 mA cm−2 under the air mass (AM0) spectrum, which is completely satisfied the demand of 36%-efficiency 5J solar cell (∼ 12 mA cm−2). Finally, Dark-IV characteristics reveal that the introduction of DBR does not deteriorate GaInNAs quality.