Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner

DOI: https://doi.org/10.48550/arXiv.2203.15593

2022-03-29

Abstract:Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. These high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the global and space spectra, respectively, which are higher than previous record six-junction devices.

Applied Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to improve the conversion efficiency of triple - junction solar cells, making it exceed the record efficiency of existing multi - junction (such as six - junction) solar cells. Specifically, the researchers achieve this goal by optimizing the band - gap combination in triple - junction inverted metamorphic multi - junction (IMM) solar cells. The following are the specific problems that the paper attempts to solve:

1. **The non - ideal band - gap of the GaAs intermediate layer in the existing triple - junction IMM design**:
- In the traditional triple - junction IMM design, the intermediate layer usually uses GaAs material, and its band - gap is 1.4 eV. However, the band - gap of GaAs is not optimal for both the global spectrum and the space spectrum, which limits the improvement of the overall efficiency.

2. **Introducing the quantum well (QW) structure to optimize the band - gap**:
- In order to improve the band - gap of the GaAs intermediate layer, the researchers introduced a thick GaInAs/GaAsP stress - balanced quantum well (QW). This QW structure can fine - tune the band - gap without introducing dislocations, thereby increasing the absorptivity and voltage.

3. **Improving the overall performance of triple - junction IMM cells**:
- By integrating the optimized QW intermediate layer into the triple - junction IMM cell, combined with the high - quality GaInP top layer and the lattice - mismatched GaInAs bottom layer, the researchers aim to achieve a higher photoelectric conversion efficiency.

### Research Results

- **Under the global spectrum**: A conversion efficiency of 39.5% has been achieved, exceeding the previous record of six - junction solar cells.
- **Under the space spectrum**: A conversion efficiency of 34.2% has been achieved, which is the highest initial - life triple - junction IMM cell efficiency reported so far.

### Formula Summary

- **Relationship between band - gap and voltage**:
\[
W_{oc}=\frac{E_g}{q}-V_{oc}
\]
where \( E_g \) is the band - gap energy, \( q \) is the electron charge, \( V_{oc} \) is the open - circuit voltage, and \( W_{oc} \) is the band - gap voltage offset.

- **Relationship between current density and voltage**:
\[
J\sim J_0\exp\left(\frac{qV}{nkT}\right)
\]
where \( J_0 \) is the saturation current density, \( n \) is the ideality factor, \( k \) is the Boltzmann constant, and \( T \) is the temperature.

Through these improvements, the researchers not only improved the efficiency of triple - junction IMM cells but also demonstrated the great potential of quantum well technology in the photovoltaic field.