Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
Stephanie Essig,Christophe Allebé,Timothy Remo,John F. Geisz,Myles A. Steiner,Kelsey Horowitz,Loris Barraud,J. Scott Ward,Manuel Schnabel,Antoine Descoeudres,David L. Young,Michael Woodhouse,Matthieu Despeisse,Christophe Ballif,Adele Tamboli
DOI: https://doi.org/10.1038/nenergy.2017.144
IF: 56.7
2017-08-25
Nature Energy
Abstract:Today’s dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25–27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III–V//Sidevices with mechanically stacked, independently operated III–V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III–V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III–V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III–V growth techniques and new substrate materials are successful.
materials science, multidisciplinary,energy & fuels