Abstract:ABSTRACT The monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×10 6 cm −2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages ( V oc ) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm 2 . These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In 0.49 Ga 0.51 P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the V oc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

Theoretical Investigation of Lattice-Matched III-N-V/Si Double-Junction Solar Cells

Theoretical Study on Potential Performance of Lattice-Matched Monolithic GaNP/GaNAsP/Si Triple-Junction Solar Cell

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Optimum Design And Preparation Of A-Si/A-Si/A-Sige Triple-Junction Solar-Cells

Optimum design and preparation of<i>a</i>‐Si/<i>a</i>‐Si/<i>a</i>‐SiGe triple‐junction solar cells

Designing III-V Multijunction Solar Cells on Silicon

High-efficiency InP-based Multijunction Solar Cells

Current Matching and Efficiency Optimization in a Two-Junction Nanowire-on-silicon Solar Cell

An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology

Study on Si1-xGex gradual buffer layer of III-V/Si multi-junction solar cells based on first-principles calculations

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Research on Monolithic AlGaInP/AlGaInAs/GaInAs/Ge Quadruple-Junction Solar Cell for High Efficiency Lattice-Matched Tandem Photovoltaic Device

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g

Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Fabrication of High Voltage GaAs Micro-Solar Cell Arrays

Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction

Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding