Study on Si1-xGex gradual buffer layer of III-V/Si multi-junction solar cells based on first-principles calculations
Qian Wang,Yu Zhuang,Abuduwayiti Aierken,Qiaogang Song,Qin Zhang,Youbo Dou,Qiuli Zhang,Shuyi Zhang
DOI: https://doi.org/10.1039/d3cp05309a
IF: 3.3
2023-12-09
Physical Chemistry Chemical Physics
Abstract:III-V/Si multi-junction solar cells have been widely studied in recent years due to their excellent theoretical efficiency (~ 42%). In order to solve the problem of lattice mismatch between Si and III-V compound of III-V/Si solar cells. The different hexagonal Si1-xGex buffer layer models on the surface of hexagonal diamond Si(001) were built, and the structural, electronic and optical properties of purposed models were calculated based on first principles calculations. The results showed that all models of designed buffer layer could effectively reduce the lattice mismatch, and the buffer layer hex-Si1-xGex (x = 0, 0.75, 1) is the ideal model, which has obtained the best lattice-matching improvement with high defect formation energy, as well as direct band gap property and the larger light adsorption coefficient. These theoretical models here with analyzed properties could offer a promising pathway toward realizing high efficiency and low cost III-V/Si multi-junction solar cells.
chemistry, physical,physics, atomic, molecular & chemical