High efficiency triple junction thin film silicon solar cells with optimized electrical structure

bofei liu,lisha bai,ze chen,xiaodan zhang,dekun zhang,jian ni,qian huang,changchun wei,jian sun,xinliang chen,huizhi ren,guofu hou,guangcai wang,ying zhao
DOI: https://doi.org/10.1002/pip.2564
2015-01-01
Abstract:We report on improving the performance of pin-type a-Si:H/a-SiGe:H/mu c-Si:H triple-junction solar cells and corresponding single-junction solar cells in this paper. Based on wet-etching sputtered aluminum-doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo-electrical material properties, after adjusting individual single-junction solar cells utilized in triple-junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a-Si:H/a-SiGe:H and a-SiGe:H/mu c-Si:H double-junction solar cells, we compensated for the open circuit voltage (V-oc) loss at the a-Si:H/a-SiGe:H TRJ by adopting a p-type mu c-Si:H layer with a low activation energy. By combining the optimized single-junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin-ype a-Si:H/a-SiGe:H/mu c-Si:H triple-junction solar cells. Copyright (C) 2014 John Wiley & Sons, Ltd.
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