Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells

Yeonhwa Kim,Hyun‐Beom Shin,Eunkyo Ju,May Angelu Madarang,Rafael Jumar Chu,Tsimafei Laryn,Taehee Kim,In‐Hwan Lee,Ho Kwan Kang,Won Jun Choi,Daehwan Jung

DOI: https://doi.org/10.1002/solr.202400318

IF: 9.1726

2024-08-23

Solar RRL

Abstract:A 15.2% efficient monolithically integrated InGaP/GaAs/Si triple‐junction solar cell by using In0.10Al0.16Ga0.74As digital‐alloy dislocation filter layers is demonstrated. Impacts of threading dislocations and residual thermal tension on the InGaP/GaAs/Si cells are investigated by comparing them to co‐grown InGaP/GaAs tandem cells on GaAs. A realistic pathway toward 33% efficient epitaxially grown III–V/Si triple‐junction solar cells is proposed. Direct epitaxy of III−V materials on Si is a promising approach for highly stable, scalable, and efficient Si‐based multijunction solar cells. However, challenges lie in overcoming epitaxial dislocations and residual thermal strain generated by lattice constant and thermal‐expansion‐coefficient mismatches, respectively. Herein, a 15.2% efficient InGaP/GaAs/Si triple‐junction solar cell with an open‐circuit voltage of 2.36 V by using In0.10Al0.16Ga0.74As digital‐alloy dislocation filter layers is first demonstrated. The filter layers are utilized in the n‐GaAs buffer on Si to reduce threading dislocation density to 4 × 107 cm−2 while maintaining optical transparency to Si bottom cell. Then, the impacts of threading dislocations and residual tension on InGaP/GaAs/Si cells are systematically investigated by comparing them to the co‐grown InGaP/GaAs tandem cells on a native GaAs substrate. Based on the comparative analysis, a strategy to suppress material deformation and defect formation toward 30% efficient InGaP/GaAs/Si triple‐junction solar cells is proposed.

energy & fuels,materials science, multidisciplinary