Abstract:A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided.

Influence of Doping in InP Buffer on Photoluminescence Behavior of InPBi

Investigation to the Deep Center Related Properties of Low Temperature Grown InPBi with Hall and Photoluminescence

Influence of Pb doping on superconductivity of α-BiPd and β-Bi2Pd alloys

The identification of the dominant donors in low temperature grown InPBi materials

Formation of Bi − Bi Dimers in Heavily Bi -Doped Lead Halide Perovskites: Origin of Carrier Density Saturation

Anomalous increase of sub-band gap photoluminescence from InPBi layers grown by liquid phase epitaxy

Bi-induced Acceptor Level Responsible for Partial Compensation of Native Free Electron Density in InP1−xBix Dilute Bismide Alloys

Understanding the Impact of Bismuth Heterovalent Doping on the Structural and Photophysical Properties of CH 3 NH 3 PbBr 3 Halide Perovskite Crystals with Near-IR Photoluminescence.

Influence of Bi3+ doping on microstructure and photoelectric properties of ZnO thin film

Raman Scattering Studies of Dilute InP1−xBixalloys Reveal Unusually Strong Oscillator Strength for Bi-induced Modes

Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

INFLUENCE OF Pb SUBSTITUTIONAND I INSERTION LAYER ON STRUCTURE AND PROPERTIES IN Bi2Sr2Co2O8 SYSTEM

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

The Influence of Pb on the Stability of the Bi-type Modulated Structure

Structural Modifications due to Bi‐Doping in MAPbBr3 Single Crystals and Their Impact on Electronic Transport and Stability

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

Enhancement in Luminescence of NaIn(WO[sub 4])[sub 2] Via Bismuth Doping

Impurity doping approach on bandgap narrowing and improved photocatalysis of Ca2Bi2O5

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures