Abstract:Organic-inorganic hybrid metal halide perovskites have emerged as a promising candidate for low-temperature thermoelectric conversion. However, challenges remain in heavily doping bulk perovskite single crystals without phase segregation or self-doping compensation issues to increase the carrier concentration. Previous efforts to enhance their thermoelectric performance rely on photoexcitation or surface/interface doping, which is not suitable for bulk devices to work in dark. This study achieves high monovalent and trivalent doping concentrations of up to 5 % in bulk single crystals of MAPbI 3 and MAPbBr 3 without phase segregation or defect formation. For monovalent doping, K + and Li + are incorporated into the perovskite lattice as interstitials. The resulting lattice distortion/microstrain enhances the electrical conductivity by 10 ∼ 100 times of undoped samples at 420 K. Trivalent doping using SbCl 3 , BiBr 3 , and BiI 3 significantly enhances the carrier concentration and electrical conductivity, up to 10 12 cm −3 and 0.038 S m −1 for MAPbBr 3 with 10 % BiI 3 at 465 K, respectively, which is 10 5 times of the undoped samples and 10 times of the best reports on doped MAPbBr 3 . Interestingly, the Bi 3+ dopant oxidizes the deep defect state Pb 0 , resulting in Bi + and Pb 2+ formation and contributing to the enhanced electrical conductivity. Enhanced thermoelectric figure of merit (ZT) is achieved in MAPbBr 3 with 5 % BiI 3 at 315 K, almost 100 times of the best reports on doped MAPbBr 3 . This study provides fundamental understanding of doping-modulated microstructural, charge carrier, and thermoelectric properties of hybrid halide perovskites, offering potential doping strategies to realize the theoretically predicted promising thermoelectric properties in their bulk single crystals for practical thermoelectric devices. The doping-modulated carrier transport will also guide the optimization of optoelectronic applications of halide perovskites for solar cells, light emitters, and photodetectors.

Formation of Bi − Bi Dimers in Heavily Bi -Doped Lead Halide Perovskites: Origin of Carrier Density Saturation

Understanding the Impact of Bismuth Heterovalent Doping on the Structural and Photophysical Properties of CH 3 NH 3 PbBr 3 Halide Perovskite Crystals with Near-IR Photoluminescence.

Bright Luminescence of Sb Doping in All-Inorganic Zinc Halide Perovskite Variant

Structural Modifications due to Bi‐Doping in MAPbBr3 Single Crystals and Their Impact on Electronic Transport and Stability

Optical Characterizations Of The Surface States In Hybrid Lead-Halide Perovskites

Unveiling heavy heterovalent doping-modulated microstructure and thermoelectric performance in bulk hybrid perovskite single crystals

Formation of DY Center as n-type Limiting Defect in Bi-Doped Hybrid Halide Perovskites

Bismuth Doping-Induced Stable Seebeck Effect Based On Mapbi(3) Polycrystalline Thin Films

Tuning the Electronic Structures of All-Inorganic Lead Halide Perovskite CsPbI3 Via Heterovalent Doping: A First-Principles Investigation

The Impact of Bi-doped on MAPb(IxBr1-x)3 Mixed Halide Perovskite Films

Influence of Doping in InP Buffer on Photoluminescence Behavior of InPBi

Influence of defects and dopants on the photovoltaic performance of Bi2S3: First-principles insights

Enhanced photoelectric performance in Cu–Bi double halide perovskite single crystals

Investigation to the Deep Center Related Properties of Low Temperature Grown InPBi with Hall and Photoluminescence

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

Effect of dimensional expansion on carrier transport behaviors of the hexagonal Bi-based perovskite crystals

Investigation on the phase transition, geometric and electronic properties of Bi-doped CsPbBr3 perovskites

Tuning the Optoelectronic Property of All-Inorganic Lead-Free Perovskite via Finely Microstructural Modulation for Photovoltaics

Intrinsic doping limitations in inorganic lead halide perovskites

Enhanced visible light absorption in layered Cs3Bi2Br9 through mixed-valence Sn(ii)/Sn(iv) doping

Bi-induced Acceptor Level Responsible for Partial Compensation of Native Free Electron Density in InP1−xBix Dilute Bismide Alloys