Structural Modifications due to Bi‐Doping in MAPbBr3 Single Crystals and Their Impact on Electronic Transport and Stability
Sarah Su‐O Youn,Gee Yeong Kim,William Jo
DOI: https://doi.org/10.1002/smll.202407141
IF: 13.3
2024-10-10
Small
Abstract:An optimum doping concentration for bismuth (Bi)‐doped MAPbBr3 single crystals is identified at 0.063% where the overall material properties including electrical conductivity, mobility, carrier concentration, and thermal stability show marked improvement compared to other Bi concentrations. This suggests the presence of a "sweet spot", where the stabilization of Bi substituting the Pb site optimally enhances the optoelectronic properties and stability of Bi‐doped MAPbBr3. Doping strategy in lead halide perovskites is essential to enhance its optoelectrical properties and expand the potential applications. In this work, the mechanisms, for how dopants affect the overall structural, optical, electrical, and chemical properties and stability of lead halide perovskite materials, are investigated. This is done by specifically considering various bismuth (Bi) doping concentrations in MAPbBr3 single crystals grown using the inverse temperature crystallization method. The resultant doped single crystals exhibit a saturation point when Bi concentration exceeds 0.063% which is considered an optimum doping point. The highest thermal stability is also achieved at this doping concentration among the doped single crystals. This study clearly identifies how Bi doping affects the properties of MAPbBr3 and extends to consider stability, which has not been fully considered for MA‐based perovskites previously. This will provide a clear understanding of evaluating doped perovskite materials for enhanced material properties, device performance, and stability.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology