Abstract:A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided.

Investigation to the Deep Center Related Properties of Low Temperature Grown InPBi with Hall and Photoluminescence

The identification of the dominant donors in low temperature grown InPBi materials

Influence of Doping in InP Buffer on Photoluminescence Behavior of InPBi

Anomalous increase of sub-band gap photoluminescence from InPBi layers grown by liquid phase epitaxy

Bi-induced Acceptor Level Responsible for Partial Compensation of Native Free Electron Density in InP1−xBix Dilute Bismide Alloys

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

Bismuth-induced band-tail states in GaAsBi probed by photoluminescence

Formation of Bi − Bi Dimers in Heavily Bi -Doped Lead Halide Perovskites: Origin of Carrier Density Saturation

Novel Ingapbi Single Crystal Grown by Molecular Beam Epitaxy

Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

Plasma Frequency and Dielectric Function Dependence on Doping and Temperature for P-Type Indium Phosphide Epitaxial Films

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

Raman Scattering Studies of Dilute InP1−xBixalloys Reveal Unusually Strong Oscillator Strength for Bi-induced Modes

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

Inhomogeneous Superconductivity in BaPb1−x Bi x O3

The roles of Bi in InAs and InAsBi nanostructure growth

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Electronic properties of InBixP1-x alloy in the P-rich range calculated using first-principles calculations

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

Detecting P-Type Conduction in Ba-Doped Inn