Abstract:A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn, leads to a redistribution of all electrons in the host, and, if designed properly, changes the location of the Fermi level EF and the density of conducting charge carriers near EF. The principle is proven experimentally in elemental Bi, whereby group III elements In and Ga dope Bi p-type, in spite of the fact that all three atoms are trivalent in the solid state. Electronic structure calculations show the formation of a hyperdeep defect state (HDS) and its effect on the EF in Bi doped with In (Bi:In) and Ga (Bi:Ga). The HDS at -5 to -6 eV below the EF of elemental Bi hybridizes with the Bi 6p electrons, and deprives the Bi valence band of two electrons per impurity atom. This then perturbs the electron count in the solid and lowers the EF. The charge on the impurity atoms is unchanged. In principle, this doping action does not result in the appearance of ionized impurities that scatter conduction electrons and holes in conventional doping. Experimentally, Shubnikov - de Haas and Hall Effect measurements show that adding In to Bi results in an increase in the density of holes. Thermoelectric, galvanomagnetic and thermomagnetic data are given for single-crystal and polycrystalline samples. In-doping leads to an enhancement of the thermoelectric figure of merit, which suggests that the new doping mechanism also gives a route to develop better thermoelectric materials. The same mechanism is at work for Sn-doped Bi (Bi:Sn), although here ionized impurity scattering is not avoided.

Detecting P-Type Conduction in Ba-Doped Inn

P-Type Conduction in Zn-Ion Implanted Inn Films

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

First-Principles Study of the P-Type Doped Inn

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

P-type doping of elemental bismuth with indium, gallium and tin: a novel doping mechanism in solids

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Density Functional Study on the Ferromagnetism of Alkaline Earth Doped Inn

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

P-Type Behavior in In–N Codoped ZnO Thin Films

Plasma Frequency and Dielectric Function Dependence on Doping and Temperature for P-Type Indium Phosphide Epitaxial Films

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Hole Mobility in Mg-Doped P-Type Inn Films

InN doped with Zn: Bulk and surface investigation from first principles

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Magnesium-doped InSbN P-N Junctions for Infrared Photodetection