Abstract:Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 x 10(17) cm(-3) to 8 x 10(20) cm(-3) are compared. P-type conductivity is indicated for the Mg concentration range of 1 x 10(18) cm(-3) to 9 x 10(19) cm(-3) from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schoche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 x 10(20) cm(-3) are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening. (C) 2014 Elsevier B.V. All rights reserved.

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Luminescent Properties Of Nitrogen Doped Gap Semiconductor Studied With Photothermal Deflection Spectroscopy

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Advantage Of In- Over N-Polarity For Disclosure Of P-Type Conduction In Inn:Mg

Temperature Sensitive Photoconductivity Observed in Inn Layers

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Photoconductivity in In x Ga 1-x N epilayers

Magnesium-doped InSbN P-N Junctions for Infrared Photodetection

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Realization Of P-Type Conduction In Undoped Mgxzn1-Xo Thin Films By Controlling Mg Content

Growth and Properties of Mg-doped In-polar InN Films

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Detecting P-Type Conduction in Ba-Doped Inn

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy

Electrical Properties of Ingan Grown by Molecular Beam Epitaxy

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior