Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Temperature Sensitive Photoconductivity Observed in Inn Layers

Photoconductivity in In_xGa_1-xN Epilayers

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Temperature Dependence Of The Fundamental Band Gap Of Inn

Plasma Frequency and Dielectric Function Dependence on Doping and Temperature for P-Type Indium Phosphide Epitaxial Films

Temperature-Dependent Optical Properties of Wurtzite Inn

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy

Observation of Negative Thermo-Optical Coefficient in Cubic Mgzno Thin Films

Unusual Properties of the Fundamental Band Gap of InN

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

P-Type Behavior in In–N Codoped ZnO Thin Films

The temperature dependence of optical properties of InGaN alloys

Acceptor States in the Photoluminescence Spectra of N-Inn

Deep Donor State in Inn: Temperature-Dependent Electron Transport in the Electron Accumulation Layers and Its Influence on Hall-Effect Measurements

Experimental study of negative photoconductivity in n-PbTe(Ga) epitaxial films

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Photoluminescence of N‐inn with Low Electron Concentrations

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films