Boris A. Akimov,Vladislav A. Bogoyavlenskiy,Ludmila I. Ryabova,Vyacheslav N. Vasilkov
Abstract:We report on low-temperature photoconductivity (PC) in n-PbTe(Ga) epitaxial films prepared by the hot-wall technique on <111>-BaF_2 substrates. Variation of the substrate temperature allowed us to change the resistivity of the films from 10^8 down to 10_{-2} Ohm x cm at 4.2 K. The resistivity reduction is associated with a slight excess of Ga concentration, disturbing the Fermi level pinning within the energy gap of n-PbTe(Ga). PC has been measured under continuous and pulse illumination in the temperature range 4.2-300 K. For films of low resistivity, the photoresponse is composed of negative and positive parts. Recombination processes for both effects are characterized by nonexponential kinetics depending on the illumination pulse duration and intensity. Analysis of the PC transient proves that the negative photoconductivity cannot be explained in terms of nonequilibrium charge carriers spatial separation of due to band modulation. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with a negative correlation energy. Specifics of the PC process is determined by the energy levels attributed to donor Ga III, acceptor Ga I, and neutral Ga II states with respect to the crystal surrounding. The energy level corresponding to the metastable state Ga II is supposed to occur above the conduction band bottom, providing fast recombination rates for the negative PC. The superposition of negative and positive PC is considered to be dependent on the ratio of the densities of states corresponding to the donor and acceptor impurity centers.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the negative photoconductivity (NPC) phenomenon observed in n - type gallium - doped lead telluride (n - PbTe:Ga) epitaxial films. Specifically, the authors hope to reveal the following aspects through experimental research:
1. **Mechanism of NPC**: Explain why positive photoconductivity (PPC) and negative photoconductivity (NPC) occur simultaneously in n - PbTe:Ga films with low resistivity, and NPC dominates at low temperatures.
2. **Influence of material properties**: Explore how factors such as substrate temperature, film resistivity, and doping concentration affect these photoconductivity phenomena. In particular, the change in film resistivity at different substrate temperatures was studied, and the influence of this change on the photoconductivity characteristics was analyzed.
3. **Microscopic mechanism**: Infer the valence - state behavior of Ga impurities in PbTe and their corresponding energy - level structures from experimental data. Special attention was paid to the mixed - valence behavior of Ga, that is, Ga can exist in different oxidation states (such as Ga\(^{III}\), Ga\(^{I}\) and Ga\(^{II}\)), and how the transitions between these states affect the photoconductivity characteristics was explored.
4. **Dynamic process**: The transient photoconductivity processes under different temperatures and illumination conditions were studied, especially the non - exponential dynamic characteristics of NPC and its relationship with the PC process.
### Main findings
- **Resistivity dependence**: By changing the substrate temperature, the resistivity of the film can be adjusted within a wide range. The n - PbTe:Ga films with low resistivity show an obvious NPC effect, while PPC is mainly observed in samples with higher resistivity.
- **Origin of NPC**: NPC is considered to be related to the mixed - valence state of Ga impurities. Especially at low temperatures, the existence of the Ga\(^{II}\) state enables electrons to recombine rapidly, resulting in a decrease in resistance. In addition, the distribution and relative position of the Ga impurity energy levels also have an important impact on NPC.
- **Transient characteristics**: Under pulsed - light illumination conditions, NPC shows a very fast dynamic process, with a characteristic time of several tens of microseconds, which is not related to inter - band transitions and spatially separated non - equilibrium carriers. Instead, it may be related to the formation and disappearance of local states.
In summary, this paper aims to deeply understand the complex photoconductivity phenomena in n - PbTe:Ga films, especially the origin of NPC and its microscopic mechanism, and provide a theoretical basis for the development of high - performance optoelectronic devices based on such materials.