Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Temperature Dependence Of The Fundamental Band Gap Of Inn

Unusual Properties of the Fundamental Band Gap of InN

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Temperature Dependence Of The Optical Properties Of Alinn

Temperature Effects on Optical Properties of InN Thin Films

Effects of Growth Temperature on the Optical Properties of InN Nanostructures Grown by MOCVD

Effects Of The Narrow Band Gap On The Properties Of Inn

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Temperature Dependence of Refractive Index in Inn Thin Films Grown by Reactive Sputtering

Temperature-Dependent Optical Properties of Wurtzite Inn

Temperature Dependence Of The Optical Properties In Gamnn

Study on the Photoluminescence Properties of Inn Films

Acceptor States in the Photoluminescence Spectra of N-Inn

Temperature Dependence of Photoluminescence from InNAsSb Layers: the Role of Localized and Free Carrier Emission in Determination of Temperature Dependence of Energy Gap

Influence of Strain on the Band Gap Energy of Wurtzite InN

Photoluminescence of N‐inn with Low Electron Concentrations

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Optical Properties of InN Films Grown by MOCVD

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Hydrostatic Pressure Dependence of the Fundamental Bandgap of Inn and In-Rich Group Iii Nitride Alloys

Effects of Electron Concentration on the Optical Absorption Edge of InN