Abstract:Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N2 plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction, atomic-force microscopy (AFM), and Hall measurements. Both XRD θ–2θ and ω scans show that the full width at half maximum of the (0002) peak nearly continuously decrease with increasing growth temperature, while InN grown at 590 °C shows the poorest surface morphology from AFM. It is suggested that three-dimensional characterization is necessary for an accurate evaluation of the quality of the InN epilayer. Hall mobility as high as 542 cm2/V s was achieved on film grown at ∼500 °C with an electron concentration of 3×1018 cm−3 at room temperature. These results argue against the common view that nitrogen vacancies are responsible for the high background n-type conductivity of InN. To illuminate the relationship between Hall mobility and carrier concentration, the electrical properties of all InN films grown recently were summarized.

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Relation Between Structural and Optical Properties of InN Andinxga1-Xn Thin Films

Unusual Properties of the Fundamental Band Gap of InN

Influence of Strain on the Band Gap Energy of Wurtzite InN

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Optical Properties of InN Films Grown by MOCVD

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Temperature-Dependent Optical Properties of Wurtzite Inn

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Effects Of The Narrow Band Gap On The Properties Of Inn

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Narrow bandgap group III-nitride alloys

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Temperature Dependence Of The Fundamental Band Gap Of Inn

Influence of GaN Buffer Layer for InN Growth

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films