Relation Between Structural and Optical Properties of InN Andinxga1-Xn Thin Films

Z. Liliental‐Weber,Dmitri N. Zakharov,Jakub Jaśiński,Kin Man Yu,Jinghui Wu,Joel W. Ager,W. Walukiewicz,E. E. Häller,Hai Lu,S. X. Li,W. J. Schaff

2004-01-01

Abstract:Transmission Electron Microscopy (TEM) and opticalmeasurements obtained from InN and In1-xGaxNfilms (0

What problem does this paper attempt to address?

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

KM Yu,Z Liliental-Weber,W Walukiewicz,W Shan,JW Ager,SX Li,RE Jones,EE Haller,H Lu,WJ Schaff

DOI: https://doi.org/10.1063/1.1861513

IF: 4

2005-01-01

Applied Physics Letters

Abstract:Detailed transmission electron microscopy (TEM), x-ray diffraction (XRD), and optical characterization of a variety of InN thin films grown by molecular beam epitaxy under both optimized and non-optimized conditions is reported. Optical characterization by absorption and photoluminescence confirms that the band gap of single crystalline and polycrystalline wurtzite InN is 0.70 {+-} 0.05 eV. Films grown under optimized conditions with a AlN nucleation layer and a GaN buffer layer are stoichiometric, single crystalline wurtzite structure with dislocation densities not exceeding mid-10{sup 10} cm{sup -2}. Non-optimal films can be poly-crystalline and display an XRD diffraction feature at 2{theta} {approx} 33{sup o}; this feature has been attributed by others to the presence of metallic In clusters. Careful indexing of wide angle XRD scans and selected area diffraction patterns shows that this peak is in fact due to the presence of polycrystalline InN grains; no evidence of metallic In clusters was found in any of the studied samples.
Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Daniel Hofstetter,Laurent Despont,M. Gunnar Garnier,Esther Baumann,Fabrizio R. Giorgetta,Philipp Aebi,Lutz Kirste,Hai Lu,William J. Schaff

DOI: https://doi.org/10.1063/1.2738372

IF: 4

2007-01-01

Applied Physics Letters

Abstract:The authors investigated a 1μm thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray diffraction reveals that this nominally hexagonal InN layer contains roughly 1% of cubic phase InN, a comparison between measured and simulated x-ray photoelectron diffraction data allowed them to directly determine the polarity of the crystal. Furthermore, the data indicate that the InN surface consists of a mosaic of domains oriented at an azimuth of 180° to each other, where the azimuth corresponds to the rotation angle around the [0001] axis.
Structure, Electrical and Optical Properties of TiNx Films by Atmospheric Pressure Chemical Vapor Deposition

Gangfeng Duan,Gaoling Zhao,L. H. Wu,Xin Lin,Gaorong Han

DOI: https://doi.org/10.1016/j.apsusc.2010.11.180

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:Titanium nitride (TiNx) films with various nitride compositions (x) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl4 and NH3 as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiNx films exhibited a transmission band with a peak value of about 15% in the visible region (400–700 nm). As the wavelength increased to transition point (λT-R), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50% near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength (λT-R) with increasing the nitride composition were also discussed.
Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Wang Xiong,Zhang Bing-Po,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.1088/1674-1056/20/10/106103

2011-01-01

Abstract:Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In(2)O(3) target powers are investigated. IZO thin films grown at different In(2)O(3) target sputtering powers show evident morphological variation and different grain sizes. As the In(2)O(3) sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In(2)O(3) target power of 100 W displays the highest electrical mobility of 13.5 cm.V(-1).s(-1) and the lowest resistivity of 2.4x10(-3) Omega.cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In(2)O(3) target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.
Compositional Modulation in in X Ga 1−x N: TEM and X-ray Studies

Z Liliental-Weber,DN Zakharov,KM Yu,JW Ager,W Walukiewicz,EE Haller,H Lu,WJ Schaff

DOI: https://doi.org/10.1093/jmicro/dfi033

2005-01-01

Microscopy

Abstract:Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD) have been used to study compositional modulation in In(x)Ga(1-x) N layers grown with compositions close to miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200 nm thick AlN or GaN buffer layer grown on a sapphire substrate. Periodic compositional modulation leads to extra electron diffraction spots and satellite reflections in XRD in the theta-2theta coupled geometry. The ordering period delta measured along c-axis was about delta = 45 A for x = 0.5 and delta = 66 A for x = 0.78 for samples grown on AlN buffer layer. TEM and XRD determinations of delta were in good agreement. Compositional modulation was not observed for the sample with x = 0.34 grown on a GaN buffer layer. Larger values of delta were observed for layers with higher In content and for those having larger mismatch with the underlying AlN buffer layer. The possibility that the roughness of the AlN growth surface promotes strong In segregation on particular crystallographic planes leading to compositional modulation is considered.
Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Wei Zheng,Zhe Chuan Feng,Rui Sheng Zheng,Hao-Hsiung Lin,Xin Qiang Wang,Ting-Shan Chan,Ling-Yun Jang,Chee Wee Liu

DOI: https://doi.org/10.11591/telkomnika.v11i2.2050

2013-01-01

Abstract:InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). X-ray absorption fine structure have been used to study the local structure of some typical In x Ga 1-x N alloys with high indium (In) composition of x=0.78 and 0.86. A detailed analysis of the extended x-ray absorption fine structure of In K-edge by using the IFEFFIT program, and the chemical bonds of In-N are obtained. The x-ray absorption near-edge structure of In K- and L-edge and N K-edge are investigated, and the electronic structure of In x Ga 1-x N are determined with these high In content In x Ga 1-x N ternary compounds. The calculated XANES spectra of N K-edge, based on first principle method, are consistent with the observed spectra. DOI: http://dx.doi.org/10.11591/telkomnika.v11i2.2050
Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Yoshihiro Ishitani,Xinqiang Wang,Song-Bek Che,Akihiko Yoshikawa

DOI: https://doi.org/10.1063/1.2875918

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:The infrared reflectance spectra of InN∕GaN structures are analyzed in two energy regions for higher and lower energy branches of the longitudinal optical phonon-plasmon coupled modes. For samples with smaller residual electron density than 5×1017cm−3 and the film thickness of 0.7–4μm, the spectra down to 200 or 250cm−1 shows the existence of the electron accumulation with sheet electron density of 1013cm−2 in the vicinity of the InN∕GaN-interface. The effect of the surface electron accumulation on the spectra is not identified, which is possibly caused by the small mobility of the order of 10cm2∕Vs or less for the surface electrons. The electron density of the inside bulk region is obtained with account of this interface accumulation. However, for samples with higher electron density and thickness of several micrometers a model with uniform electron density well reproduce the experimental spectra. With this spectrum fitting we extract the electron properties inside the bulk region for samples with the thickness of about 700nm or larger.
Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Fengfeng Cheng,Tao Fa,Xinqiang Wang,Shude Yao

DOI: https://doi.org/10.1088/0256-307X/29/2/026101

2012-01-01

Chinese Physics Letters

Abstract:Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-mu m-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield chi(min) = 2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR-XRD results, we obtain the values of the screw and edge densities to be rho(screw) = 7.0027 x 10(9) and rho(edge) = 8.6115 x 10(9) cm(-2), respectively. The tetragonal distortion of the sample is found to be -0.27% by angular scans, which is close to the -0.28% derived by SR-XRD. The value of |e(perpendicular to)/e(parallel to)| = 0.6742 implies that the InN layer is much stiffer along the.. axis than that along the c axis, where e(parallel to) is the parallel elastic strain, and e(perpendicular to) is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60meV, additional shoulder band could be due to impurities and related defects.
Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

B. Liu,R. Zhang,Z. L. Xie,H. Lu,Q. J. Liu,Z. Zhang,Y. Li,X. Q. Xiu,P. Chen,P. Han,S. L. Gu,Y. Shi,Y. D. Zheng,W. J. Schaff

DOI: https://doi.org/10.1063/1.2832753

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:This article reports on the study of microstructure and dislocation of InN films using high resolution x-ray diffraction grown on sapphire (0001) both by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The mosaic tilt, twist, and correlation lengths of InN films are determined by using symmetrical and asymmetrical reflections as well as reciprocal space mapping. Deducing from these results, MBE-grown InN film exhibits the edge-type dislocations of 4.0×109 cm−2, which is about ten times higher than the density of screw-type dislocations. In MOCVD-grown InN sample, the edge-type dislocations density is as high as 2.1×1010 cm−2, and the screw-type dislocations density is 1.3×109 cm−2. They indicate that edge type is the predominant dislocation type in the InN films. By comparing the reported transmission electron microscopy results, the accuracy of evaluation for the dislocation density using the mosaic model is proved.
Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Xingyue Zhangyang,Lei Liu,Feifei Lu,Jian Tian

DOI: https://doi.org/10.1016/j.apsusc.2022.153394

IF: 6.7

2022-08-01

Applied Surface Science

Abstract:First-principles calculations based on density functional theory are utilized to investigate the electronic and optical properties of composition-tunable InxGa1-xN bulks and nanowires, where four different compositions (x = 0, 0.33, 0.67, 1) were considered. In the established nanowire models, the electronic properties of bare InN nanowires and passivated InN nanowires with diameters of 3.732 Å, 6.378 Å, 9.567 Å were compared. The results show that increasing the In composition could reduce the stability of the InxGa1-xN nanowires, while increasing the nanowire diameter helps to improve the stability. In addition, the band gap of InxGa1-xN nanowires narrows with the increase of In composition, and the intrinsic absorption spectrum is red-shifted. These studies will provide early design guidance for electron sources which are based on InxGa1-xN nanowire photocathodes.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Optical Properties of InN Films Grown by MOCVD

Jieying Kong,Bin Liu,Rong Zhang,Zili Xie,Yong Zhang,Xiangqian Xiu,Youdou Zheng

DOI: https://doi.org/10.1007/s12200-008-0038-9

2007-01-01

Journal of Semiconductors

Abstract:By means of optical absorption, photoluminescence (PL), Raman scattering and ellipsometry, optical properties of indium nitride (InN) films grown by metal organic chemical vapor deposition (MOCVD) are investigated. Through absorption and PL measurements, it is proven that the band gap of high quality InN is 0.68 eV, which agrees with the recently reported value, 0.7 eV. By analysis of the Raman scattering spectrum, the comparatively low background concentration of electron results in a smaller band gap value. The transition energy of wurtzite InN at critical point is determined by ellipsometric spectra. In addition, the complex refractive index of InN at energy ranging from 0.65 to 4.0 eV is obtained for the first time.
Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Qingjun Xu,Bin Liu,Shiying Zhang,Tao,Jiangping Dai,Guotang He,Zili Xie,Xiangqian Xiu,Dunjun Chen,Peng Chen,Ping Han,Rong Zhang

DOI: https://doi.org/10.1016/j.spmi.2016.11.029

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:High-Al-content AlxGa1-xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AIN (HT-AIN) interlayer by metal organic chemical vapor deposition (MOCVD). The best crystalline quality, among these AlxGa1-xN alloys, can be obtained for an AIN mole fraction x = 0.55, where the full-width at half-maximum of the Al0.55Ga0.45N (0002) diffraction peak was measured to be 259 arcsec by high resolution X-ray diffraction (HRXRD). The screw threading dislocation (TDs) density was 2 x 10(8) cm(-2) evaluated by transmission electron microscope (TEM), which agreed with the calculations from Williamson-Hall plots. Moreover, cross-sectional TEM indicated that the HT-AIN interlayer could sufficiently reduce the threading dislocations (TDs) through generation of V trenches in the HT-AIN interlayer, since the TDs propagated along the V trenches, then bent into basal planes and annihilated with other dislocations. The study of optical properties indicated that obvious S-shape of temperature dependence on emission energy was observed for Al0.55Ga0.45N layers, which was attributed to exciton localization with energy (E-IOC) similar to 14.95 meV at 10 K resulting from potential fluctuation and band tail states. The time-resolved photoluminescence (TRPL) curves showed a bi-exponential decay at low temperature. The fast decay time implied the presence of the localized excitons enhancing radiative recombination, while the quite slow one was due to the dominance of trapping mechanisms originating from cation vacancy complexes and the V-III-related complexes. (C) 2016 Elsevier Ltd. All rights reserved.
Study on the Photoluminescence Properties of Inn Films

Wang Jian,Xie Zi-Li,Zhang Rong,Zhang Yun,Liu Bin,Chen Peng,Han Ping

DOI: https://doi.org/10.7498/aps.62.117802

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:The photoluminescence (PL) properties of InN films grown by metal organic chemical vapor deposition (MOCVD) have been investigated. InN has a high level of background carrier concentration, which makes the Fermi level lie above the conduction band. By nonlinear fitting of the PL results, along with the energy band relations, we calculated the band gap of InN film to be 0.67 eV and the carrier concentration n=5.4×1018 cm?3. Thus we found a connection between PL results and the carrier concentration of InN films. In addition, we also studied the dependence of peak position and intensity of PL on temperature: the intensity of photoluminescence decreases as the temperature increases, and the peak position shows a red shift instead of an S-shape variation. Such a difference may be explained by a huge full width at half maximum of PL spectra. Also the concentration of carriers and the magnitude of the built-in electric field in the material may have influence on such a result.
Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Xue-Peng Shen,Jian-Bo Lin,Rui-Yi Hu,Ya-Chao Liu,Lian-Qiang Xu,Hai-Bo Niu,Xue-Feng Xiao,Vei Wang

DOI: https://doi.org/10.1039/d4ra00017j

2024-02-23

Abstract:We conduct a comprehensive theoretical analysis of wurtzite GaxIn1-xN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition (x = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration. Our effective band structure analysis reveals the meticulous preservation of Bloch characters near band extrema, minimizing charge carrier scattering. Furthermore, we scrutinize deviations from linear Vegard-like dependence in elastic, piezoelectric, and dielectric constants. Additionally, our calculations encompass various optical properties, including absorption coefficient, reflectivity, refractive index, energy loss function, and extinction coefficient. We analyze their trends with photon energy, providing valuable insights into the optical behavior of GaxIn1-xN alloys. Our results, in excellent agreement with available experimental data, significantly contribute to a deeper understanding of the alloys' electronic properties. This study offers valuable insights that may illuminate potential applications of GaxIn1-xN alloys in diverse technological fields.
Small Band Gap Bowing In In1-Xgaxn Alloys

jian wu,w walukiewicz,k m yu,j w ager,e e haller,hai lu,w j schaff

DOI: https://doi.org/10.1063/1.1489481

IF: 4

2002-01-01

Applied Physics Letters

Abstract:High-quality wurtzite-structured In-rich In1-xGaxN films (0less than or equal toxless than or equal to0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1-xGaxN alloys is well fit with a bowing parameter of similar to1.4 eV. The direct band gap of the In1-xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet. (C) 2002 American Institute of Physics.
Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

D. Fu,R. Zhang,B. Liu,Z. L. Xie,X. Q. Xiu,S. L. Gu,H. Lu,Y. D. Zheng,Y. H. Chen,Z. G. Wang

DOI: https://doi.org/10.1088/0022-3727/44/24/245402

2011-01-01

Abstract:In this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on γ-LiAlO2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction ω/2θ scan together with polarized Raman spectroscopy. The epitaxial relationship between the m-plane InN and the substrate was found to be [0 0 0 1]InN ∥ [0 1 0]LAO and [1 1 − 2 0]InN ∥ [0 0 1]LAO. The inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. Atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane InN film, which originated from the replication of the surface morphological anisotropy of the substrate. Scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. A small direct band gap of ∼0.7 eV of the m-plane InN film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. Finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the Burstein–Moss effect.
Structural Characterization, Optical Properties, and Phase Transitions of In1–xSnx Alloy Thin Films

Jinbo Zhang,Yuxiang Zheng,Zhanyu Wang,Songyou Wang,Rongjun Zhang,Shangdong Yang,Dongdong Zhao,Liao Yang,Dongxu Zhang,Liangyao Chen

DOI: https://doi.org/10.1021/acs.jpcc.5b12288

2016-01-01

Abstract:In1-xSnx (x = 0.06-0.51) alloy films were deposited on Si substrates by electron beam evaporation and characterized by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and spectroscopic ellipsometry. The dielectric functions of the In1-xSnx alloy films were obtained in the energy range from 1.55 to 4.13 eV based on the spectroscopic ellipsometry measurements, and it is believed that a solid-solid phase transitions led to changes in epsilon. The phase diagram of nanometer-sized particles is different from that of the bulk material, and this phenomenon can be explained by the surface stress of the particles. The effects of alloying on the electronic band structure were studied from the perspective of first-principles calculations.
Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

1 V. N. Strocov,P. O. Nilsson,T. Schmitt,A. Augustsson,L. Gridneva,D. Debowska-Nilsson,R. Claessen,A. Yu. Egorov,V. M. Ustinov,Zh. I. Alferov,V. N. Strocov, 1

DOI: https://doi.org/10.1103/physrevb.69.035206

IF: 3.7

2004-01-01

Physical Review B

Abstract:Soft-x-ray-emission and -absorption spectroscopies with their elemental specificities are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence-band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In4N which become the main recombination centers in GaInAsN. Furthermore, a k character of some valence and conduction states, despite the random-alloy nature of Ga(In)AsN, manifests itself in resonant inelastic x-ray scattering.

physics, condensed matter, applied,materials science, multidisciplinary
Raman scattering study of In xGa 1-xN alloys with low indium compositions

Long Teng,Rong Zhang,Zili Xie,Tao Tao,Zhao Zhang,Yecao Li,Bin Liu,Peng Chen,Ping Han,Youdou Zheng

DOI: https://doi.org/10.1088/0256-307X/29/2/027803

2012-01-01

Chinese Physics Letters

Abstract:InxGa1-xN alloys with low indium composition.. in the range 0.13 <= x <= 0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13 <= x <= 0.16) and relaxed (0.18 <= x <= 0.23). The prominent enhancement of A(1) longitudinal-optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A(1) (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1-xN samples, a linear dependence of the A(1) (LO) mode frequency is obtained: Omega(0)(x) = (740.8 +/- 3.3) - (143.1 +/- 16.0)(x), which is the evidence of one-mode behavior in InxGa1-xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.
Raman Scattering Study of In x Ga 1− x N Alloys with Low Indium Compositions

Long Teng,Rong Zhang,Zi-Li Xie,Tao Tao,Zhao Zhang,Ye-Cao Li,Bin Liu,Peng Chen,Ping Han,You-Dou Zheng

DOI: https://doi.org/10.1088/0256-307x/29/2/027803

2012-01-01

Chinese Physics Letters

Abstract:InxGa1−xN alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique. Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups: pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23). The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325 nm laser excitation. For pseudomorphic samples, the frequencies of A1 (LO) phonons agree well with the theoretical predictions, which verifies that the samples are fully strained. For relaxed InxGa1−xN samples, a linear dependence of the A1 (LO) mode frequency is obtained: Ω0(x) = (740.8 ± 3.3) − (143.1 ± 16.0)x, which is the evidence of one-mode behavior in InxGa1−xN ternary alloys. Residual strains in these partially relaxed samples are also evaluated.

Relation Between Structural and Optical Properties of InN Andinxga1-Xn Thin Films

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Structure, Electrical and Optical Properties of TiNx Films by Atmospheric Pressure Chemical Vapor Deposition

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Compositional Modulation in in X Ga 1−x N: TEM and X-ray Studies

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Optical Properties of InN Films Grown by MOCVD

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Study on the Photoluminescence Properties of Inn Films

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Small Band Gap Bowing In In1-Xgaxn Alloys

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Structural Characterization, Optical Properties, and Phase Transitions of In1–xSnx Alloy Thin Films

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions