Abstract:Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to investigate the structural and electronic properties. In both alloys we found that the fundamental parameters do not follow Vegard's law. The lattice parameters, $a, c,$ and $u$, for the Al$_x$Ga$_{1-x}$N alloy are found to exhibit downward bowing, while for In$_x$Ga$_{1-x}$N there is an upward bowing for the $a$ and $c$ parameters and a downward bowing for the internal parameter, $u$. Furthermore, we found that for both alloys, the band gap value does not follow Vegard's law. As a by--product of our electronic band structure calculations, the effective masses of the binary compounds as well as their related alloys were calculated. We show that the calculated properties for the binary compounds, as well as for the studied alloys, show good agreement with most of the previously reported results. Finally, using the frozen phonon approach, the A$_1(TO)$ mode for the different systems studied in this work was calculated. Our calculations show good agreement with experimental values reported for the binary compounds. For the ternary alloys, our calculations reproduce experimental values for Al$_x$Ga$_{1-x}$N as well as theoretical predictions for In$_x$Ga$_{1-x}$N.

Small Band Gap Bowing In In1-Xgaxn Alloys

Band gap bowing for high In content InAlN films

Universal bandgap bowing in group-III nitride alloys

Temperature-Controlled Epitaxy of Inxga1-Xn Alloys and Their Band Gap Bowing

Narrow bandgap group III-nitride alloys

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Unusual Properties of the Fundamental Band Gap of InN

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Transition Energies and Bowing Parameters for In-rich InGaN and InAlN Alloys

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Influence of the Electronic States Anisotropy on the Band Gap Pressure Coefficient of InxGa1−xN Alloys

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Origin of the Unusually Large Band-Gap Bowing and the Breakdown of the Band-Edge Distribution Rule in the Snxge1-X Alloys

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Anomalous band-gap bowing of AlN(1-x)Px alloy

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Optical Properties of InN Films Grown by MOCVD

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells