Influence of the Electronic States Anisotropy on the Band Gap Pressure Coefficient of InxGa1−xN Alloys

L. Shi,K. Xu,K. L. Xiong,H. Yang,J. Ni
DOI: https://doi.org/10.1063/1.3266019
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:Using the first-principle methods, we investigate the structural and electronic properties of the wurtzite InxGa1−xN (00.25. The densities of px and py orbitals are higher than that of pz orbital at the valence band top. This anisotropy induces the pronounced bowing of the pressure coefficient.
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