Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Deep Donor State in Inn: Temperature-Dependent Electron Transport in the Electron Accumulation Layers and Its Influence on Hall-Effect Measurements

Donor and Acceptor Concentrations in Degenerate InN

Resonant Localized Donor State above the Conduction Band Minimum in InN

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Acceptor States in the Photoluminescence Spectra of N-Inn

Electron Accumulation at Inn/Aln and Inn/Gan Interfaces

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Indium nitride: Evidence of electron accumulation

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities