Abstract:Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is crucial for the reduction of photocurrent losses in III-V multijunction devices. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). To mimic an in-situ interface experiment with in-situ stepwise deposition of the contact material, 1 nm - 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. We observed (2x2)/c(4x2) low-energy electron diffraction patterns with characteristic diffuse streaks along the [01-1] direction due to P-P dimers on both AlInP(100) and GaInP(100) as-prepared surfaces. Atomic composition analysis confirmed P-rich termination on both surfaces. Angle-resolved XPS measurements revealed a surface core level shift of 0.9 eV in P 2p peaks and the absence of interface core level shifts. We assigned the surface chemical shift in the P2p spectrum to P-P bonds on a surface. We found an upward surface band bending on the (2x2)/c(4x2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset of 0.2 eV was derived by XPS and band alignment diagram models for the n-n junctions were suggested.

Electron Accumulation at Inn/Aln and Inn/Gan Interfaces

Surface Charge Accumulation of InN Films Grown by Molecular-Beam Epitaxy

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Indium nitride: Evidence of electron accumulation

Universality of Electron Accumulation at Wurtzite C- and A-Plane and Zinc-Blende InN Surfaces

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Effect Of An Aln Buffer Layer On The Epitaxial Growth Of Inn By Molecular-Beam Epitaxy

Origin Of Electron Accumulation At Wurtzite Inn Surfaces

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Study of InN/GaN interfaces using molecular dynamics

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Doping‐dependence of Subband Energies in Quantized Electron Accumulation at InN Surfaces

Deep Donor State in Inn: Temperature-Dependent Electron Transport in the Electron Accumulation Layers and Its Influence on Hall-Effect Measurements

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy