Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Electron Accumulation at Inn/Aln and Inn/Gan Interfaces

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Deep Donor State in Inn: Temperature-Dependent Electron Transport in the Electron Accumulation Layers and Its Influence on Hall-Effect Measurements

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Effects of Electron Concentration on the Optical Absorption Edge of InN

Effects of Dislocations on Electron Transport in Wurtzite InN

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Photoluminescence of N‐inn with Low Electron Concentrations

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Carrier Recombination Processes in In-polar N-Inn in Regions of Low Residual Electron Density

Acceptor States in the Photoluminescence Spectra of N-Inn