Abstract:Low growth rates in AlScN/GaN heterostructures grown by metal‐organic chemical vapor cause the formation of linearly graded interlayers and degradation of the electrical characteristics. Growth rates are enhanced with novel Sc precursors, and high interface abruptness and homogeneous layers are achieved. Structural quality strongly affects the performance of the 2D electron gas, which is the core of high‐electron‐mobility transistors. Aluminum scandium nitride barrier layers increase the available sheet charge carrier density in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of high‐frequency amplifiers and high voltage switches. Growth of AlScN by metal‐organic chemical vapor deposition is challenging due to the low vapor pressure of the conventional Sc precursor Cp3Sc, which induces low growth rates of AlScN and leads to thermally‐induced AlScN/GaN‐interface degradation. In this work, novel Sc precursors are employed to reduce the thermal budget by increasing the growth rate of the AlScN layer. The AlScN/GaN interfaces are investigated by high‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, time‐of‐flight secondary ion mass spectrometry, capacitance–voltage, current–voltage and temperature‐dependent Hall measurements. Linearly graded interlayers with strain‐induced stacking faults, edge, and screw dislocations form at the AlScN/GaN interface at growth rates of 0.015 nms−1. Growth rates of 0.034 nms−1 and higher allow for abrupt interfaces, but a compositional grading in the barrier remains. Homogeneous barrier layers can be achieved at growth rates of 0.067 nms−1 or by growing an AlN interlayer. The electrical properties of the heterostructures are sensitive to Sc accumulations at the cap/barrier interface, residual impurities from precursor synthesis, and surface roughness. This study paves the way for high‐performing devices.

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Boosting the Two-Dimensional Electron Gas Density of Al0.20Ga0.80N/GaN Heterostructures by Regrowth of an Epitaxial Sc0.18Al0.82N Layer

Dominant Scattering Mechanisms in Limiting the Electron Mobility of Scandium Nitride

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

Properties of bulk scandium nitride crystals grown by physical vapor transport

Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE

Electronic structure and thermoelectric properties of epitaxial Sc1-xVxNy thin films grown on MgO(001)

Understanding Interfaces in AlScN/GaN Heterostructures