Abstract:We investigate the electrical properties of nominally undoped, 10-40-nm-thick ScN(111) layers grown on nearly lattice-matched GaN:Fe/Al$_2$O$_3$(0001) templates by plasma-assisted molecular beam epitaxy. Hall-effect measurements yield electron concentrations of 0.7-3.1$\times 10^{19}$ $\text{cm}^{-3}$ and mobilities of 50-160 cm$^{2}$V$^{-1}$s$^{-1}$ at room temperature. The temperature-dependent (4-360 K) conductivity exhibits two distinct regimes, suggesting two-band conduction in an impurity band and the conduction band. Assuming a single shallow donor in ScN and employing the standard two-band conduction model, we extract the carrier density and mobility in these bands. The results reveal nondegenerate characteristics for the 40-nm-thick layer, while the thinner layers are weakly degenerate. For the nondegenerate layer, the donor ionization energy amounts to approximately 12 meV. The electron mobility of the layers is limited by ionized impurity scattering and phonon scattering at low and high temperatures, respectively. Fits with an expression for optical phonon scattering developed for weakly degenerate semiconductors return an effective phonon energy of $(61 \pm 5)$ meV, in between the energies of the longitudinal optical ($\approx 84$ meV) and transverse optical ($\approx 45$ meV) phonon modes in ScN.

What problem does this paper attempt to address?

The paper primarily explores the electrical properties of ScN(111) thin films grown on GaN(0001) substrates using Plasma-Assisted Molecular Beam Epitaxy (PAMBE). Specifically, the study focuses on the following aspects: 1. **Film Sample Preparation**: ScN(111) thin films with thicknesses ranging from 10 to 40 nanometers were grown on nearly lattice-matched GaN(0001) templates using PAMBE technology. 2. **Electrical Property Measurements**: Temperature-dependent Hall effect measurements were conducted on these films to investigate the variation of electron concentration ($n_H$) and mobility ($\mu_H$) with temperature. The measurement temperature range was from 4K to 360K. 3. **Dual-Band Conduction Mechanism**: The experimental data revealed two distinct conductive regions, indicating a dual-band conduction mechanism involving impurity bands and conduction bands. Assuming the presence of a single shallow donor level in ScN, the standard dual-band conduction model was used to extract the carrier density and mobility in the two bands. 4. **Non-Degenerate Characteristics Analysis**: For the 40-nanometer-thick film, the study found that it exhibited non-degenerate characteristics, and the donor ionization energy was determined to be approximately 12meV. 5. **Mobility Limiting Factors**: The study showed that ionized impurity scattering is the main factor limiting mobility at low temperatures, while optical phonon scattering becomes dominant at high temperatures. Through fitting, the effective energy of optical phonons was obtained as (61±5)meV, which lies between the energies of longitudinal optical phonons (about 84meV) and transverse optical phonons (about 45meV) in ScN. 6. **Consistency Between Theory and Experiment**: The theoretical analysis in the paper was in good agreement with the experimental results, supporting the view that optical phonon scattering is the limiting factor for mobility at high temperatures. In summary, this paper aims to gain an in-depth understanding of the electrical properties of ScN thin films under different thickness and temperature conditions and to explore the key factors affecting their performance. This is of great significance for the development of high-performance electronic devices based on ScN.

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