Abstract:While aluminum scandium nitride based ferroelectric materials have shown significant promise for non-volatile memory applications, difficulties relating challenges in device performance, such as electrical leakage, to structural characteristics motivate improved understanding of the fundamental structure-property relationship. Spinodal decomposition has been reported in this material system, consistent with our observation of compositional segregation in AlScN films grown by reactive sputter epitaxy. To better understand the effects of spatially non-uniform Sc concentrations, the electronic and ferroelectric (FE) properties of AlScN as a function of Sc distribution are studied using density functional theory (DFT). We explore the impact of Sc-rich atomic planes in wurtzite AlScN with Sc concentration ranging from 0 to 44 at% through a supercell approach. We find that while spontaneous polarization decreases with Sc concentration (∼133 to 102 μC cm-2), periodic Sc-rich planar clusters slow this effect, suggesting that phase segregation counters the effects of increasing Sc composition. Furthermore, the FE switching barrier per formula unit (f.u.) as a function of composition exhibits a local maximum of 0.60 eV f.u.-1 at 25% Sc concentration in the presence of Sc-rich planes but decreases monotonically (0.51 to 0.28 eV f.u.-1) if Sc is uniformly distributed, suggesting that the spatial distribution of Sc plays an important role in the optoelectronic properties of the material by changing the energy landscape. Sc clustering also decreases the bandgap of the material. This study shows that the structural complexity arising from spatial composition modulation provides tunability of ferroelectric properties in AlScN ferroelectrics.

Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method

Properties of bulk scandium nitride crystals grown by physical vapor transport

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

Synthesis and study of ScN thin films

Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

First-principles calculations of the ground-state properties and stability of ScN

Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

A comparative study for structural and electronic properties of single-crystal ScN

Electronic and magnetic properties of transition-metal doped ScN for spintronics applications

Electronic Structure and Physical Properties of ScN in Pressure： Density-Functional Theory Calculations

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN