Abstract:Scandium nitride (ScN) is a degenerate n-type semiconductor with very high carrier concentrations, low resistivity, and carrier mobilities comparable to those of transparent conducting oxides such as zinc oxide. Because of its small lattice mismatch to gallium nitride (GaN), <1%, ScN is considered a very promising material for future GaN based electronics. Impurities are the source of the degeneracy. Yet, which specific impurities are the cause has remained in contention. ScN thin films of various thicknesses were grown on magnesium oxide substrates in a (001) orientation using reactive magnetron sputtering across a range of deposition conditions. X-ray diffraction was used to verify crystal orientation. Film thicknesses ranging from 39 to 85 nm were measured using scanning electron microscopy. The electronic transport properties of the films were characterized using Hall-effect measurements at temperatures ranging from 10 to 320 K. At 10 K, the electron concentration varies from 4.4 × 1020 to 1.5 × 1021 cm−3, resistivity from 2.1 × 10−4 to 5.0 × 10−5 Ω·cm, and Hall mobility from 66 to 97 cm2/V·s. Secondary ion mass spectroscopy (SIMS) was used to determine film compositions. Finally, density functional theory (DFT) was used to compute the activation energies for various point defects including nitrogen and scandium vacancies and oxygen and fluorine substituting for nitrogen. For both oxygen and fluorine substitution, the energies were negative, indicating spontaneous formation. Nevertheless, the combined results of the Hall, SIMS, and DFT strongly suggest that oxygen substitution is the primary mechanism behind the high carrier concentration in these samples.

Properties of bulk scandium nitride crystals grown by physical vapor transport

Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

The transport properties of Nb-doped trichalcogenide Ta0.8Nb0.2S3

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions