Abstract:Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al1−xScxN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al2O3(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures > ~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures > 800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al1−xScxN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

Reduction of the thermal conductivity of the thermoelectric material ScN by Nb alloying

Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Negative thermal expansion and compressibility of Sc1–xYxF3 (x≤0.25)

Al1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations

Fabrication, negative thermal expansion and optical properties of scandium molybdate thin films

Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy

Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Optical properties of ScN layers grown on Al$_{2}$O$_{3}$(0001) by plasma-assisted molecular beam epitaxy

Synthesis and study of ScN thin films

Preparation of Epitaxial Scandium Trifluoride Thin Films using Pulsed Laser Deposition

Large thermal anisotropy in monoclinic niobium trisulfide: a thermal expansion tensor study

Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method

Anomalous and non-monotonic strain dependent thermal conductivity of typical negative thermal expansion material ScF3

Properties of bulk scandium nitride crystals grown by physical vapor transport

Anisotropic elasticity drives negative thermal expansion in monocrystalline SnSe

Thermal expansion coefficient of single crystal silicon from 7 K to 293 K

Compressibility And Thermal Expansion Of Cubic Silicon Nitride