Abstract:Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Pvt Growth of 6h Sic Crystals and Defect Characterization

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Nucleation and Growth of Polycrystalline SiC

A novel approach for the synthesis of 6H-SiC at a low temperature of 460°C

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Faster Growth of 6H-Sic Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

High quality and wafer-scale cubic silicon carbide single crystals

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates