Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Micro-characterisation of Si wafers by high-pressure thermopower technique

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Defects in Ge-doped Cz-Si Annealed under High Stress

Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of 1Gpa

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending method

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

Influence of High Pressure Heat Treatment on Nucleation of Oxygen Precipitation at Low Temperature in CZ Silicon

Transmission Electron Microscopy Investigation of Oxygen Precipitation in Czochralski Silicon Annealed under High Pressure

Effect of Nitrogen on Oxygen Precipitation in Czochralski Silicon During High-Temperature Annealing