Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Effects of Sc on the Vacancy and Solute Behaviours in Aluminium

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films

Lateral Superlattice - A Possible Origin of the Large Leakage Current in Al1-xScxN

A phenomenological thermodynamic energy density function for ferroelectric wurtzite Al1−xScxN single crystals

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Reversal Barrier and Ferroelectric Polarization of Strained Wurtzite Al1-xScxN Ferroelectric Alloys

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

Towards higher electro-optic response in AlScN

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

Dopant Concentration Dependent Room Temperature Ferromagnetism in Crystalline Sc Doped AlN Thin Films

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

Optical Phonon Modes in Al1−xScxN

Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides

Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films

Doping effects on the ferroelectric properties of wurtzite nitrides

Why Does AlScN Appear to Be the Best Choice for IIIA-VA-based Wurtzite Ferroelectrics?

A Landau–Devonshire analysis of strain effects on ferroelectric Al1−xScxN

First-Principles Study of nAlN/nScN Superlattices with High Dielectric Capacity for Energy Storage