Abstract:Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency towards oxidation. In the present study, the oxidation process of tungsten-capped and uncapped Al$_{0.83}$Sc$_{0.17}$N thin films is investigated by hard X-ray photoelectron spectroscopy (HAXPES). The samples had been exposed to air for either two weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen, and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N$_2$ spectral feature thus can be directly related to the oxidation process. We present an oxidation model that mimics these spectroscopic results of the element-specific oxidation processes within Al$_{1-x}$Sc$_x$N. Finally, in operando HAXPES data of uncapped and capped AlScN-capacitor stacks are interpreted using the proposed model.

What problem does this paper attempt to address?

This paper aims to explore the stability of aluminum scandium nitride (AlScN) thin films during long - term exposure to air and their oxidation processes. Specifically, the study focuses on the protective effect of tungsten capping layers on AlScN thin films, and analyzes in detail the oxidation behaviors of uncovered and capped AlScN samples after exposure to air for different times (two weeks and six months) by means of hard X - ray photoelectron spectroscopy (HAXPES) technique. ### Research Background and Problems - **Background**: Aluminum scandium nitride (AlScN) has become a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. However, scandium doping increases the oxidation tendency of the material, which poses challenges to the long - term stability and performance of AlScN devices. - **Problems**: - **Oxidation Sensitivity**: AlScN is prone to rapid surface oxidation at room temperature, which will affect its ferroelectric properties. - **Oxidation Mechanism**: A detailed understanding of the oxidation process of AlScN is required, especially the microscopic chemical changes in which nitrogen atoms are replaced by oxygen atoms. - **Protection Measures**: Evaluate the protective effect of tungsten capping layers on AlScN thin films to prevent oxidation. ### Main Research Contents - **Experimental Method**: Use the HAXPES technique to study the oxidation behaviors of AlScN samples after exposure to air for different times. - **Sample Preparation**: Prepare uncovered and tungsten - capped AlScN thin - film samples and expose them to air for two weeks and six months respectively. - **Data Analysis**: Observe the changes in the chemical states of elements during the oxidation process by analyzing the HAXPES spectra of Sc 2p, N 1s, and Al 2s core levels. ### Key Findings - **Oxidation Gradient**: An oxidation gradient is formed from the surface to the bulk phase in AlScN thin films after exposure to air. - **Element - Selective Oxidation**: Nitrogen atoms are mainly replaced by oxygen atoms at the positions where they are combined with scandium atoms, forming Sc - O bonds, while Al - N bonds are less affected. - **Oxidation Model**: A simple oxidation model is proposed to explain the element - specific oxidation processes observed in the experiment. - **Electric Field Influence**: In the operando HAXPES experiment, it is found that the application of an electric field can significantly accelerate the oxidation process of uncovered AlScN samples, while the tungsten capping layer can effectively prevent oxidation. ### Conclusions - **Long - Term Stability**: Uncovered AlScN thin films will undergo significant oxidation after exposure to air, while the tungsten capping layer can effectively protect AlScN and maintain its chemical stability. - **Oxidation Mechanism**: Nitrogen atoms are mainly replaced by oxygen atoms at the positions where they are combined with scandium atoms, forming Sc - O bonds, which is the main mechanism of AlScN oxidation. - **Application Suggestions**: In order to improve the long - term stability of AlScN devices, a fully in - situ growth process should be adopted, and appropriate electrode materials (such as tungsten) should be selected to protect the AlScN layer. Through these studies, the authors provide important scientific basis for understanding and improving the long - term stability and performance of AlScN ferroelectric devices.

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