Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors

Domain Dynamics and Resistive Switching in Ferroelectric Al1–xScxN Thin Film Capacitors

Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

Impact of Scaling Thickness on the Ferroelectric Properties of Pt/Al $_{\text{0.8}}$ Sc $_{\text{0.2}}$ N/Pt Capacitors

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Domain Dynamics During Ferroelectric Switching

Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films

Direct Observation of Capacitor Switching Using Planar Electrodes

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor

Anomalously Abrupt Switching of Ferroelectric Wurtzites

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Multi-type nanoscale domain switching dynamics in tetragonal PIN-PMN-PT single crystal under electrical bias

Correlation Between Nanoscale and Nanosecond Resolved Ferroelectric Domain Dynamics and Local Mechanical Compliance

Mechanical-Induced Polarization Switching in Relaxor Ferroelectric Single Crystals.