Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Md Redwanul Islam,Niklas Wolff,Georg Schönweger,Tom-Niklas Kreutzer,Margaret Brown,Maike Gremmel,Patrik Straňák,Lutz Kirste,Geoff L. Brennecka,Simon Fichtner,Lorenz Kienle
2024-11-26
Abstract:This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8° and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications.
Applied Physics,Materials Science
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is **how to reduce the leakage current in Al₀.₇₃Sc₀.₂₇N ferroelectric thin films and control their polarity through oxygen doping**. Specifically, the author studied the effects of oxygen doping on the material structure, polarity, and leakage current of Al₀.₇₃Sc₀.₂₇N thin films by introducing oxygen during reactive sputtering. ### Main problem decomposition: 1. **Reduce leakage current**: - The author found that oxygen doping can significantly reduce the leakage current of Al₀.₇₃Sc₀.₂₇N thin films near the coercive field. Compared with the undoped samples, the leakage current of the oxygen - doped samples is reduced by nearly four times. - Under an electric field lower than the coercive field, the steady - state leakage current of the oxygen - doped samples is also reduced by about one order of magnitude. 2. **Control thin - film polarity**: - Oxygen doping makes the polarity of Al₀.₇₃Sc₀.₂₇N thin films gradually change from nitrogen polarity (N - polar) to metal polarity (M - polar). In particular, when the oxygen doping concentration reaches a certain threshold (such as Nmix = 8 sccm and 10 sccm), a mixed - polarity state appears in the thin films. - Further increasing the oxygen doping concentration (such as Nmix = 12 sccm and 15 sccm), the thin films are completely transformed into the M - polar state. 3. **Maintain the structural integrity of the thin films**: - Although oxygen doping was carried out, the crystal structure of the thin films was not significantly affected. High - resolution X - ray diffraction (HRXRD) analysis shows that even at the highest oxygen doping level (Nmix = 15 sccm), the c - axis epitaxial texture of the thin films only increased by about 20%. - Scanning transmission electron microscopy (STEM) analysis indicates that oxygen is evenly distributed inside the thin films, and there is no obvious chemical segregation or formation of the α - Al₂O₃ phase. ### Experimental methods: - **Oxygen doping method**: Oxygen doping is achieved by adjusting the proportion of oxygen in the nitrogen gas flow (Nmix). - **Characterization means**: Including X - ray diffraction (XRD), scanning transmission electron microscopy (STEM), energy - dispersive X - ray spectroscopy (EDS), time - of - flight secondary ion mass spectrometry (ToF - SIMS), etc. ### Conclusion: Through oxygen doping, the author successfully reduced the leakage current of Al₀.₇₃Sc₀.₂₇N thin films and effectively controlled their polarity, while maintaining the structural integrity of the thin films. These results provide new ideas and methods for the application of ferroelectric nitrides in microelectronic devices.