Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

High quality epitaxial piezoelectric and ferroelectric wurtzite Al$_{1-x}$Sc$_x$N thin films

Doping effects on the ferroelectric properties of wurtzite nitrides

High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1- xScxN Thin Films

Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study

Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al_0.65Sc_0.35N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Role of Oxygen on Structure and Piezoelectric Properties of Al0.65Sc0.35 N Thin Films

Reversal Barrier and Ferroelectric Polarization of Strained Wurtzite Al1-xScxN Ferroelectric Alloys

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Oxygen-vacancy-induced Reversible Control of Ferroelectric Polarization in Ba4Eu2Fe2Nb8O30 Ceramics

Improving Reproducibility of Sputter Deposited Ferroelectric Wurtzite Al0.6Sc0.4N Films using In-situ Optical Emission Spectrometry

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

Stress Effect on the Leakage Current Distribution of Ferroelectric Al0.7Sc0.3N Across the Wafer

Ionic Bonds Control Ferroelectric Behavior in Wurtzite Nitrides

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Coexistence of ferroelectricity and ferromagnetism in Ni-doped Al<sub>0.7</sub>Sc<sub>0.3</sub>N thin films

Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio